Memory Effects in the Charge Response of Lightly Doped La2-xSrxCuO4
Authors: I.Raičević, D. Popović, C. Panagopoulos and T. Sasagawa.
Published in: J Supercond Nov Magn., DOI 10.1007/s10948-012-1542-0, 2012.
The in-plane magnetoresistance (MR) of a single crystal La1.97Sr0.03CuO4 has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memory, and hysteresis. These observations are qualitatively similar to the previously reported behavior of the out-of-plane resistance. The results suggest that the memory effects in the MR are related to the onset of glassiness in the dynamics of doped holes.
